Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | YOON, YS | - |
dc.contributor.author | YOON, YK | - |
dc.contributor.author | LEE, JY | - |
dc.contributor.author | YOM, SS | - |
dc.date.accessioned | 2024-01-21T21:35:43Z | - |
dc.date.available | 2024-01-21T21:35:43Z | - |
dc.date.created | 2021-09-02 | - |
dc.date.issued | 1994-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/145551 | - |
dc.description.abstract | Surface morphologies of BaTiO3 thin films have been studied by atomic force microscopy (AFM). The films on (111)InSb, indium tin oxide (ITO)-coated glass and (100)Si substrates are deposited by in-situ metalorganic chemical vapor deposition (MOCVD) at different deposition temperatures of 300-degrees-C, 400-degrees-C and 600-degrees-C, respectively. AFM under ambient conditions showed that the BaTiO3 film deposited on the ITO-coated glass had a smooth surface consisting of large hemispherical grains, while the film on (100)Si had a slightly rough surface with [110]textured rectangular grains. As-grown film on the (111)InSb substrate was in the amorphous phase except near the interface, resulting in a rough surface. Our results of dependence on the kind of substrates and growth temperature suggest that the surface morphology of the as-grown films is strongly influenced by the crystallinity and growing characteristic of the film. For low-temperature growth below the deposition temperature of 600-degrees-C, surface roughness of the BaTiO3 film is strongly dependent on growth temperature rather than crystallinity of the films related to substrates. | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.subject | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject | PULSED LASER DEPOSITION | - |
dc.subject | BARIUM-TITANATE FILMS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | BUFFER LAYERS | - |
dc.subject | SUBSTRATE | - |
dc.subject | SILICON | - |
dc.title | SURFACE MORPHOLOGIES OF BATIO3 THIN-FILMS BY ATOMIC-FORCE MICROSCOPY | - |
dc.type | Article | - |
dc.identifier.doi | 10.1143/JJAP.33.4075 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.33, no.7A, pp.4075 - 4079 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 33 | - |
dc.citation.number | 7A | - |
dc.citation.startPage | 4075 | - |
dc.citation.endPage | 4079 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | A1994PE44700051 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | PULSED LASER DEPOSITION | - |
dc.subject.keywordPlus | BARIUM-TITANATE FILMS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | BUFFER LAYERS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | BATIO3 THIN FILM | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | AFM | - |
dc.subject.keywordAuthor | SI | - |
dc.subject.keywordAuthor | INSB | - |
dc.subject.keywordAuthor | ITO GLASS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.