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dc.contributor.authorYOON, YS-
dc.contributor.authorYOON, YK-
dc.contributor.authorLEE, JY-
dc.contributor.authorYOM, SS-
dc.date.accessioned2024-01-21T21:35:43Z-
dc.date.available2024-01-21T21:35:43Z-
dc.date.created2021-09-02-
dc.date.issued1994-07-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145551-
dc.description.abstractSurface morphologies of BaTiO3 thin films have been studied by atomic force microscopy (AFM). The films on (111)InSb, indium tin oxide (ITO)-coated glass and (100)Si substrates are deposited by in-situ metalorganic chemical vapor deposition (MOCVD) at different deposition temperatures of 300-degrees-C, 400-degrees-C and 600-degrees-C, respectively. AFM under ambient conditions showed that the BaTiO3 film deposited on the ITO-coated glass had a smooth surface consisting of large hemispherical grains, while the film on (100)Si had a slightly rough surface with [110]textured rectangular grains. As-grown film on the (111)InSb substrate was in the amorphous phase except near the interface, resulting in a rough surface. Our results of dependence on the kind of substrates and growth temperature suggest that the surface morphology of the as-grown films is strongly influenced by the crystallinity and growing characteristic of the film. For low-temperature growth below the deposition temperature of 600-degrees-C, surface roughness of the BaTiO3 film is strongly dependent on growth temperature rather than crystallinity of the films related to substrates.-
dc.languageEnglish-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.subjectCHEMICAL VAPOR-DEPOSITION-
dc.subjectPULSED LASER DEPOSITION-
dc.subjectBARIUM-TITANATE FILMS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectEPITAXIAL-GROWTH-
dc.subjectBUFFER LAYERS-
dc.subjectSUBSTRATE-
dc.subjectSILICON-
dc.titleSURFACE MORPHOLOGIES OF BATIO3 THIN-FILMS BY ATOMIC-FORCE MICROSCOPY-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.33.4075-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.33, no.7A, pp.4075 - 4079-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS-
dc.citation.volume33-
dc.citation.number7A-
dc.citation.startPage4075-
dc.citation.endPage4079-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1994PE44700051-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusPULSED LASER DEPOSITION-
dc.subject.keywordPlusBARIUM-TITANATE FILMS-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusEPITAXIAL-GROWTH-
dc.subject.keywordPlusBUFFER LAYERS-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorBATIO3 THIN FILM-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorAFM-
dc.subject.keywordAuthorSI-
dc.subject.keywordAuthorINSB-
dc.subject.keywordAuthorITO GLASS-
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