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dc.contributor.authorHER, J-
dc.contributor.authorLIM, H-
dc.contributor.authorKIM, CH-
dc.contributor.authorHAN, IK-
dc.contributor.authorLEE, JI-
dc.contributor.authorKANG, KN-
dc.contributor.authorKIM, JE-
dc.contributor.authorPARK, HY-
dc.date.accessioned2024-01-21T21:35:53Z-
dc.date.available2024-01-21T21:35:53Z-
dc.date.created2022-01-10-
dc.date.issued1994-06-15-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145554-
dc.languageEnglish-
dc.publisherCHAPMAN HALL LTD-
dc.title2-TEMPERATURE TECHNIQUE FOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION GROWTH OF SILICON-NITRIDE ON INP-
dc.typeArticle-
dc.identifier.doi10.1007/BF00273243-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.13, no.12, pp.898 - 900-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume13-
dc.citation.number12-
dc.citation.startPage898-
dc.citation.endPage900-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1994NU61500017-
dc.identifier.scopusid2-s2.0-0028442550-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordAuthorsilicon-nitride on InP-
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