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dc.contributor.authorMOON, SW-
dc.contributor.authorSUH, SH-
dc.contributor.authorCHOI, CS-
dc.date.accessioned2024-01-21T21:38:59Z-
dc.date.available2024-01-21T21:38:59Z-
dc.date.created2022-01-11-
dc.date.issued1994-04-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145605-
dc.description.abstractFirstly, we have studied the indium doping concentration dependence of the electrical properties of Hg0.7Cd0.3Te monolayers grown by liquid phase epitaxy (LPE). Below the indium concentration of 1 X 10(18) cm-3, nearly 100% of indium was electrically active. Indium-doped Hg0.7Cd0.3Te /undoped Hg0.8Cd0.2Te/CdTe heterojunction was grown in a double bin graphite boat, using a slider LPE technique. After the growth, Hg-annealing was performed. An n-type Hg0.8Cd0.2Te layer was formed just beneath the 1190.7Cd0.3Te cap layer by Hg-diffusion. The Hg0.8Cd0.2Te p-n homojunction formed thereby would have no misfit defects.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectSEMICONDUCTING HG1-XCDXTE ALLOYS-
dc.subjectDEFECT STRUCTURE-
dc.subjectLATTICE-DEFECTS-
dc.subjectHETEROSTRUCTURES-
dc.subjectCDXHG1-XTE-
dc.titleINDIUM-DOPED HG0.7CD0.3TE/UNDOPED HG0.8CD0.2TE/CDTE HETEROJUNCTION GROWN BY TE-RICH LIQUID-PHASE EPITAXY-
dc.typeArticle-
dc.identifier.doi10.1016/0022-0248(94)90936-9-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.138, no.1-4, pp.944 - 949-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume138-
dc.citation.number1-4-
dc.citation.startPage944-
dc.citation.endPage949-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1994NN99700168-
dc.identifier.scopusid2-s2.0-0028760621-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusSEMICONDUCTING HG1-XCDXTE ALLOYS-
dc.subject.keywordPlusDEFECT STRUCTURE-
dc.subject.keywordPlusLATTICE-DEFECTS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusCDXHG1-XTE-
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