DSpace at KIST: Growth rate of MoSi2 layer formed by CVD of Si on Mo substrate and oxidation behavior of MoSi2/Mo couple

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DC Field	Value	Language
dc.contributor.author	윤진국	-
dc.contributor.author	변지영	-
dc.contributor.author	이강욱	-
dc.contributor.author	이종무	-
dc.contributor.author	김재수	-
dc.date.accessioned	2024-01-21T21:40:04Z	-
dc.date.available	2024-01-21T21:40:04Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1994-03	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/145622	-
dc.title	Growth rate of MoSi2 layer formed by CVD of Si on Mo substrate and oxidation behavior of MoSi2/Mo couple	-
dc.title.alternative	Si의 화학증착에 의한 MoSi2층의 성장속도 및 MoSi2/Mo 쌍의 산화특성에 관한 연구	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	대한금속학회지 = Journal of the Korean inst. of met. & mater., v.32, no.3, pp.313 - 320	-
dc.citation.title	대한금속학회지 = Journal of the Korean inst. of met. & mater.	-
dc.citation.volume	32	-
dc.citation.number	3	-
dc.citation.startPage	313	-
dc.citation.endPage	320	-
dc.subject.keywordAuthor	CVD	-
dc.subject.keywordAuthor	MoSi//2 layer	-
dc.subject.keywordAuthor	SiCl//4/H//2	-
dc.subject.keywordAuthor	hot wall	-
dc.subject.keywordAuthor	oxidation	-

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