Novel facet evolution of carbon-doped AlGaAs/GaAs multilayers on nonplanar substrate using CCl//4 grown by metalorganic chemical vapor deposition (MOCVD).

Authors
김성일민석기김용김무성박양근안준오
Issue Date
1994-01
Citation
Bull. Korean phys. soc., v.v. 12, no.no. 2, pp.? - ?
Keywords
MOCVD; GaAs; AlGaAs
URI
https://pubs.kist.re.kr/handle/201004/145672
Appears in Collections:
KIST Article > Others
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