Photoelectrochemical properties of bismuth-doped titanium oxide electrodes
- Authors
- Park, S.-Y.; Cho, B.-W.; Yun, K.-S.; Lee, E.-C.
- Issue Date
- 1994-01
- Publisher
- Kluwer Academic Publishers
- Citation
- Journal of Applied Electrochemistry, v.24, no.11, pp.1133 - 1138
- Abstract
- With the aim of obtaining TiO2 films with increased photoresponse titanium metal was alloyed with bismuth and then directly oxidized. The free energy efficiencies of the Ti-Bi oxide increased four times by increasing the bismuth content up to 10 wt %. The spectral response of the Ti -Bi oxides was slightly shifted toward the visible region with respect to the response of TiO2, and their Eg were observed to be in the range 2.87-3.0 eV. ? 1994 Chapman & Hall.
- Keywords
- Alloying; Bismuth; Characterization; Composition effects; Doping (additives); Electrochemistry; Films; Oxidation; Synthesis (chemical); Titanium dioxide; Bismuth doped titanium oxide electrodes; Photoelectrochemical properties; Electrochemical electrodes; photoelectrolysis; bismuth-doped titanium oxide electrode; photoelectrochemical conversion efficiency; energy band gap; light intensity
- ISSN
- 0021-891X
- URI
- https://pubs.kist.re.kr/handle/201004/145915
- DOI
- 10.1007/BF00241311
- Appears in Collections:
- KIST Article > Others
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