DSpace at KIST: MBE 장치에 의한 에피성장 균일도 계산 .

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	윤경식	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-21T22:16:40Z	-
dc.date.available	2024-01-21T22:16:40Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1993-08	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146003	-
dc.title	MBE 장치에 의한 에피성장 균일도 계산 .	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	대한전자공학회지, v.v. 30A, no.no. 8, pp.671 - 677	-
dc.citation.title	대한전자공학회지	-
dc.citation.volume	v. 30A	-
dc.citation.number	no. 8	-
dc.citation.startPage	671	-
dc.citation.endPage	677	-
dc.subject.keywordAuthor	MBE	-
dc.subject.keywordAuthor	GaAs epi-layer	-
dc.subject.keywordAuthor	computer simulation	-

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