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dc.contributor.authorLEE, MB-
dc.contributor.authorHAN, IK-
dc.contributor.authorLEE, YJ-
dc.contributor.authorLEE, JI-
dc.contributor.authorKANG, KN-
dc.contributor.authorLIM, H-
dc.date.accessioned2024-01-21T22:37:15Z-
dc.date.available2024-01-21T22:37:15Z-
dc.date.created2022-01-11-
dc.date.issued1993-01-15-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146122-
dc.languageEnglish-
dc.publisherCHAPMAN HALL LTD-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectINTERFACE-
dc.subjectTRAPS-
dc.titleDEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.12, no.2, pp.90 - 91-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume12-
dc.citation.number2-
dc.citation.startPage90-
dc.citation.endPage91-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1993KM81900009-
dc.identifier.scopusid2-s2.0-0027149058-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusTRAPS-
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