SLIDER LIQUID-PHASE EPITAXIAL-GROWTH OF HG0.8CD0.2TE, HG0.7CD0.3TE AND HG0.3CD0.7TE WITH PRECISE CONTROL OF ALLOY COMPOSITIONS

Abstract

A slider liquid phase epitaxial (LPE) technique, by which the solution composition can be kept constant during growth, has been developed to grow Hg1-xCdxTe epi-layers with x = 0.2, 0.3 and 0.7. A graphite button between the solution and HgTe wells in the slider boat is shown to be very effective in controlling Hg loss from the solution. Data are presented on compositional uniformity and reproducibility, surface morphology, and electrical properties.