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dc.contributor.authorLEE, MB-
dc.contributor.authorLEE, JI-
dc.contributor.authorKANG, KN-
dc.contributor.authorYOON, KS-
dc.contributor.authorHONG, S-
dc.contributor.authorLIM, KY-
dc.date.accessioned2024-01-21T23:09:37Z-
dc.date.available2024-01-21T23:09:37Z-
dc.date.created2022-01-10-
dc.date.issued1992-05-16-
dc.identifier.issn0031-8965-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146438-
dc.languageEnglish-
dc.publisherAKADEMIE VERLAG GMBH-
dc.subjectINVERSION-LAYERS-
dc.subjectSILICON-
dc.titleEFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS-
dc.typeArticle-
dc.identifier.doi10.1002/pssa.2211310149-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.131, no.1, pp.K77 - K80-
dc.citation.titlePHYSICA STATUS SOLIDI A-APPLIED RESEARCH-
dc.citation.volume131-
dc.citation.number1-
dc.citation.startPageK77-
dc.citation.endPageK80-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1992JA13500038-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeNote-
dc.subject.keywordPlusINVERSION-LAYERS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorMOSFET-
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