DSpace at KIST: Observation of oxide film formed at Si-Si bonding interface in SFB process

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DC Field	Value	Language
dc.contributor.author	주병권	-
dc.contributor.author	오명환	-
dc.contributor.author	차균현	-
dc.date.accessioned	2024-01-21T23:17:20Z	-
dc.date.available	2024-01-21T23:17:20Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1992-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146566	-
dc.title	Observation of oxide film formed at Si-Si bonding interface in SFB process	-
dc.title.alternative	SFB 공정시 Si-Si 접합 계면에 형성되는 산화막의 관찰	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회논문지, v.29A, no.1, pp.41 - 47	-
dc.citation.title	전자공학회논문지	-
dc.citation.volume	29A	-
dc.citation.number	1	-
dc.citation.startPage	41	-
dc.citation.endPage	47	-
dc.subject.keywordAuthor	micromachining	-
dc.subject.keywordAuthor	wafer direct bonding	-
dc.subject.keywordAuthor	interfacial oxide	-

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