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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author이명복-
dc.contributor.author한일기-
dc.contributor.author이유종-
dc.date.accessioned2024-01-21T23:34:27Z-
dc.date.available2024-01-21T23:34:27Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146631-
dc.titlePECVD 방법에 의해 제작된 SiNx/InP MIS 구조의 bias stress 에 의한 C-V 및 G-V 곡선의 변화 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 32, no.no. 2, pp.252 - ?-
dc.citation.title새물리-
dc.citation.volumev. 32-
dc.citation.numberno. 2-
dc.citation.startPage252-
dc.citation.endPage?-
dc.subject.keywordAuthorMIS 구조-
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