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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author엄경숙-
dc.contributor.author김영덕-
dc.contributor.author이민석-
dc.date.accessioned2024-01-21T23:34:38Z-
dc.date.available2024-01-21T23:34:38Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146634-
dc.titleTemperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationBull. Korean phys. soc., v.v. 10, no.no. 2, pp.249 - ?-
dc.citation.titleBull. Korean phys. soc.-
dc.citation.volumev. 10-
dc.citation.numberno. 2-
dc.citation.startPage249-
dc.citation.endPage?-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthortemperature-
dc.subject.keywordAuthorPL-
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