Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.

Authors
김성일민석기김용김무성엄경숙김영덕이민석
Issue Date
1992-01
Citation
Bull. Korean phys. soc., v.v. 10, no.no. 2, pp.249 - ?
Keywords
MOCVD; GaAs; temperature; PL
URI
https://pubs.kist.re.kr/handle/201004/146634
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE