Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김용 | - |
| dc.contributor.author | 김성일 | - |
| dc.contributor.author | 민석기 | - |
| dc.contributor.author | 엄경숙 | - |
| dc.contributor.author | 김무성 | - |
| dc.contributor.author | 곽병현 | - |
| dc.contributor.author | 마동성 | - |
| dc.date.accessioned | 2024-01-21T23:36:38Z | - |
| dc.date.available | 2024-01-21T23:36:38Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1992-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/146667 | - |
| dc.title | 저압 MOCVD 에 의한 GaAs 에피층의 Carbon 도핑특성 . | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | 응용물리, v.v. 5, no.no. 12, pp.586 - 590 | - |
| dc.citation.title | 응용물리 | - |
| dc.citation.volume | v. 5 | - |
| dc.citation.number | no. 12 | - |
| dc.citation.startPage | 586 | - |
| dc.citation.endPage | 590 | - |
| dc.subject.keywordAuthor | 저압 MOCVD | - |
| dc.subject.keywordAuthor | GaAs | - |
| dc.subject.keywordAuthor | carbon-doping | - |
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