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dc.contributor.authorJeong, B.S.-
dc.contributor.authorChoi, J.S.-
dc.contributor.authorChang, S.K.-
dc.contributor.authorChung, C.H.-
dc.contributor.authorPark, H.L.-
dc.contributor.authorLee, H.J.-
dc.contributor.authorLee, J.I.-
dc.contributor.authorLim, H.-
dc.contributor.authorKim, S.Y.-
dc.date.accessioned2024-01-21T23:37:49Z-
dc.date.available2024-01-21T23:37:49Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.issn0038-1098-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146687-
dc.description.abstractHeavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique. ？ 1992.-
dc.languageEnglish-
dc.subjectSemiconducting Indium Compounds--Doping-
dc.subjectSemiconductor Diodes, Light Emitting-
dc.subjectHeavy doping-
dc.subjectLPE techniques-
dc.subjectSemiconducting Indium Compounds-
dc.titlek-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P-
dc.typeArticle-
dc.identifier.doi10.1016/0038-1098(92)90396-Q-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSolid State Communications, v.82, no.1, pp.7 - 12-
dc.citation.titleSolid State Communications-
dc.citation.volume82-
dc.citation.number1-
dc.citation.startPage7-
dc.citation.endPage12-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-0026853834-
dc.type.docTypeArticle-
dc.subject.keywordPlusSemiconducting Indium Compounds--Doping-
dc.subject.keywordPlusSemiconductor Diodes, Light Emitting-
dc.subject.keywordPlusHeavy doping-
dc.subject.keywordPlusLPE techniques-
dc.subject.keywordPlusSemiconducting Indium Compounds-
dc.subject.keywordAuthorLPE-
dc.subject.keywordAuthorInGaP-
dc.subject.keywordAuthorheavily doping-
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