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dc.contributor.author강광남-
dc.contributor.author주병권-
dc.contributor.author이재옥-
dc.contributor.author김철주-
dc.contributor.author오명환-
dc.contributor.author차균현-
dc.contributor.author이명복-
dc.date.accessioned2024-01-21T23:42:21Z-
dc.date.available2024-01-21T23:42:21Z-
dc.date.created2022-01-10-
dc.date.issued1991-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146760-
dc.titleFilling-up effect of micro-gap by interfacial oxide growing in SFB process-
dc.title.alternativeSFB 공정시 계면 산화막의 성장에 의한 micro-gap의 메움 효과-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회논문지, v.28A, no.2, pp.71 - 76-
dc.citation.title전자공학회논문지-
dc.citation.volume28A-
dc.citation.number2-
dc.citation.startPage71-
dc.citation.endPage76-
dc.subject.keywordAuthorinterfacial oxide growing-
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