Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김용 | - |
dc.contributor.author | 김무성 | - |
dc.contributor.author | 김은규 | - |
dc.contributor.author | 조훈영 | - |
dc.contributor.author | 김현수 | - |
dc.contributor.author | 민석기 | - |
dc.date.accessioned | 2024-01-21T23:47:35Z | - |
dc.date.available | 2024-01-21T23:47:35Z | - |
dc.date.created | 2022-01-10 | - |
dc.date.issued | 1991-02 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/146845 | - |
dc.title | MOCVD 법으로 Si 기판위에 성장된 GaAs 에피층의 수소화 효과 . | - |
dc.type | Article | - |
dc.description.journalClass | 3 | - |
dc.identifier.bibliographicCitation | 새물리, v.v. 31, pp.31 - 37 | - |
dc.citation.title | 새물리 | - |
dc.citation.volume | v. 31 | - |
dc.citation.startPage | 31 | - |
dc.citation.endPage | 37 | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | GaAs-on-Si | - |
dc.subject.keywordAuthor | DLTS | - |
dc.subject.keywordAuthor | hydrogenation | - |
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