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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2024-01-21T23:47:35Z-
dc.date.available2024-01-21T23:47:35Z-
dc.date.created2022-01-10-
dc.date.issued1991-02-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146845-
dc.titleMOCVD 법으로 Si 기판위에 성장된 GaAs 에피층의 수소화 효과 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 31, pp.31 - 37-
dc.citation.title새물리-
dc.citation.volumev. 31-
dc.citation.startPage31-
dc.citation.endPage37-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-on-Si-
dc.subject.keywordAuthorDLTS-
dc.subject.keywordAuthorhydrogenation-
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