DEEP LEVELS IN SI-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING GAAS

Abstract

Deep levels have been investigated in Si-implanted and rapid-thermal-annealed semi-insulating GaAs:Cr, which was grown by a horizontal Bridgman method. Samples were implanted with a Si-dose of (1 - 5) x 10(12) ions cm-2 with 100 keV energy, and treated by a two-step rapid thermal annealing process at 900 and 800-degrees-C. After these processes, three electron deep levels at 0.81, 0.53 and 0.62 eV below the conduction band and three hole deep levels at 0.89, 0.64 and 0.42 eV above the valence band were observed. The new deep levels E(c) - 0.53 eV, E(c) - 0.62 eV, and E-epsilon + 0.64 eV in fact, dominate the implantation and/or the thermally damaged region, but are not found in the bulk. These results indicate that high-density deep levels may be induced near or within the implanted region by rapid heating and cooling, and that these defects may effect carrier activation.