DSpace at KIST: Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이정일	-
dc.contributor.author	이명복	-
dc.contributor.author	S. Y. Lee	-
dc.contributor.author	윤경식	-
dc.date.accessioned	2024-01-22T00:02:51Z	-
dc.date.available	2024-01-22T00:02:51Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1991-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146878	-
dc.title	Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Japanese journal of applied physics, v.v. 30, no.no. 4A, pp.L535 - ?	-
dc.citation.title	Japanese journal of applied physics	-
dc.citation.volume	v. 30	-
dc.citation.number	no. 4A	-
dc.citation.startPage	L535	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	MOSFET	-

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