DSpace at KIST: A modeling on gate voltage dependence of series resistance for GaAs MESFET's and the parameter extraction utilizing the gate probe model.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이정일	-
dc.contributor.author	양진모	-
dc.contributor.author	임한조	-
dc.contributor.author	이유종	-
dc.date.accessioned	2024-01-22T00:03:12Z	-
dc.date.available	2024-01-22T00:03:12Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1991-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146884	-
dc.title	A modeling on gate voltage dependence of series resistance for GaAs MESFET's and the parameter extraction utilizing the gate probe model.	-
dc.title.alternative	GaAs MESFET 의 소오스와 드레인 직렬저항의 게이트전압 의존성에 대한 모델링 및 Gate probe method 를 응용한 파라미터 추출 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회논문지, v.v. 28, no.no. 7, pp.526 - ?	-
dc.citation.title	전자공학회논문지	-
dc.citation.volume	v. 28	-
dc.citation.number	no. 7	-
dc.citation.startPage	526	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	GaAs MESFET	-

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