DSpace at KIST: A study on silicon/silicon dioxide interface by C-V techniques.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이정일	-
dc.contributor.author	이명복	-
dc.contributor.author	주병권	-
dc.contributor.author	김형곤	-
dc.contributor.author	오명환	-
dc.date.accessioned	2024-01-22T00:11:55Z	-
dc.date.available	2024-01-22T00:11:55Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1990-11	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147028	-
dc.title	A study on silicon/silicon dioxide interface by C-V techniques.	-
dc.title.alternative	C-V 방법에 의한 Si/SiO//2 계면상태 연구 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리, v.v. 3, no.no. 4, pp.536 - 541	-
dc.citation.title	응용물리	-
dc.citation.volume	v. 3	-
dc.citation.number	no. 4	-
dc.citation.startPage	536	-
dc.citation.endPage	541	-
dc.subject.keywordAuthor	silicon	-
dc.subject.keywordAuthor	silicon dioxide interface	-

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