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dc.contributor.authorLEE, JI-
dc.contributor.authorLEE, MB-
dc.contributor.authorKANG, KN-
dc.contributor.authorPARK, KO-
dc.date.accessioned2024-01-22T00:15:34Z-
dc.date.available2024-01-22T00:15:34Z-
dc.date.created2022-01-10-
dc.date.issued1990-06-21-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147087-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.titleSIMPLE EXTRACTION METHOD FOR MOBILITY PARAMETERS IN SI-MOSFETS AT 77-K-
dc.typeArticle-
dc.identifier.doi10.1049/el:19900558-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.26, no.13, pp.852 - 854-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume26-
dc.citation.number13-
dc.citation.startPage852-
dc.citation.endPage854-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1990DM82200016-
dc.identifier.scopusid2-s2.0-0025446435-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordAuthorFETs-
dc.subject.keywordAuthormaterials-
dc.subject.keywordAuthormaterials testing-
dc.subject.keywordAuthorSemiconductor devices-
dc.subject.keywordAuthorSemiconductor devices-
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