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dc.contributor.authorKIM, EK-
dc.contributor.authorCHO, HY-
dc.contributor.authorKIM, Y-
dc.contributor.authorKIM, MS-
dc.contributor.authorKIM, HS-
dc.contributor.authorMIN, SK-
dc.contributor.authorYOON, JH-
dc.contributor.authorCHOH, SH-
dc.date.accessioned2024-01-22T00:17:33Z-
dc.date.available2024-01-22T00:17:33Z-
dc.date.created2022-01-10-
dc.date.issued1990-03-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147120-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleDEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION-
dc.typeArticle-
dc.identifier.doi10.1063/1.345493-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.67, no.5, pp.2454 - 2456-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume67-
dc.citation.number5-
dc.citation.startPage2454-
dc.citation.endPage2456-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1990CR96900037-
dc.identifier.scopusid2-s2.0-3843140535-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthordeep electron trap-
dc.subject.keywordAuthorGaAs on Si-
dc.subject.keywordAuthormetalorganic chemical vapor deposition (MOCVD)-
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