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dc.contributor.author김용-
dc.contributor.author조훈영-
dc.contributor.author김은규-
dc.contributor.author윤주훈-
dc.contributor.author조성호-
dc.contributor.author김무성-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T00:31:33Z-
dc.date.available2024-01-22T00:31:33Z-
dc.date.created2022-01-10-
dc.date.issued1990-03-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147133-
dc.titleDeep traps in GaAs layers grown on (100)Si substrates by Mo(VI).-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of applied physics, v.v. 67, pp.2454 - ?-
dc.citation.titleJournal of applied physics-
dc.citation.volumev. 67-
dc.citation.startPage2454-
dc.citation.endPage?-
dc.subject.keywordAuthordeep levels-
dc.subject.keywordAuthorGaAs-on-Si-
dc.subject.keywordAuthorMOCVD-
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