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dc.contributor.authorCHO, HY-
dc.contributor.authorKIM, EK-
dc.contributor.authorKIM, Y-
dc.contributor.authorMIN, SK-
dc.contributor.authorYOON, JH-
dc.contributor.authorCHOH, SH-
dc.date.accessioned2024-01-22T00:31:59Z-
dc.date.available2024-01-22T00:31:59Z-
dc.date.created2021-09-05-
dc.date.issued1990-02-19-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147140-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleDEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING-
dc.typeArticle-
dc.identifier.doi10.1063/1.102705-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.56, no.8, pp.761 - 763-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume56-
dc.citation.number8-
dc.citation.startPage761-
dc.citation.endPage763-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1990CP30100021-
dc.identifier.scopusid2-s2.0-36549090846-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthordeep levels-
dc.subject.keywordAuthorGaAs-on-Si-
dc.subject.keywordAuthorrapid thermal annealing-
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