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dc.contributor.author김무성-
dc.contributor.author김용-
dc.contributor.author엄경숙-
dc.contributor.author김성일-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T00:40:07Z-
dc.date.available2024-01-22T00:40:07Z-
dc.date.created2021-09-13-
dc.date.issued1990-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147272-
dc.titleFabrication of AlGaAs/GaAs HEMT grown by MOCVD.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationKorea ITE, v.v. 8, no.no. 1, pp.230 - 233-
dc.citation.titleKorea ITE-
dc.citation.volumev. 8-
dc.citation.numberno. 1-
dc.citation.startPage230-
dc.citation.endPage233-
dc.description.isOpenAccessN-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorAlGaAs-
dc.subject.keywordAuthorHEMT-
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