Fabrication of AlGaAs/GaAs HEMT grown by MOCVD.

Authors
김무성김용엄경숙김성일민석기
Issue Date
1990-01
Citation
Korea ITE, v.v. 8, no.no. 1, pp.230 - 233
Keywords
MOCVD; GaAs; AlGaAs; HEMT
URI
https://pubs.kist.re.kr/handle/201004/147272
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE