DSpace at KIST: Establishment of optimal {100} Si etching condition for N2H4-H2O solutions and application to electrochemical etching

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DC Field	Value	Language
dc.contributor.author	주병권	-
dc.contributor.author	이윤희	-
dc.contributor.author	김형곤	-
dc.contributor.author	오명환	-
dc.date.accessioned	2024-01-22T00:41:45Z	-
dc.date.available	2024-01-22T00:41:45Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1989-11	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147298	-
dc.title	Establishment of optimal {100} Si etching condition for N2H4-H2O solutions and application to electrochemical etching	-
dc.title.alternative	N2H4-H2O 용액의 {100} Si에 대한 최적식각조건의 설정과 전기화학적 식각에의 응용	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회 논문지, v.26, no.11, pp.56 - 60	-
dc.citation.title	전자공학회 논문지	-
dc.citation.volume	26	-
dc.citation.number	11	-
dc.citation.startPage	56	-
dc.citation.endPage	60	-

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