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dc.contributor.authorCHO, HY-
dc.contributor.authorKIM, EK-
dc.contributor.authorMIN, SK-
dc.date.accessioned2024-01-22T00:41:59Z-
dc.date.available2024-01-22T00:41:59Z-
dc.date.created2022-01-10-
dc.date.issued1989-10-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147302-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleA RELATION BETWEEN EL2 (EC-0.81 EV) AND EL6 (EC-0.35 EV) IN ANNEALED HB-GAAS BY HYDROGEN PLASMA EXPOSURE-
dc.typeArticle-
dc.identifier.doi10.1063/1.344189-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.66, no.7, pp.3038 - 3041-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume66-
dc.citation.number7-
dc.citation.startPage3038-
dc.citation.endPage3041-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1989AQ96400038-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorEL2-
dc.subject.keywordAuthorEL6-
dc.subject.keywordAuthorHB-GaAs-
dc.subject.keywordAuthorhydrogen plasma-
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