DSpace at KIST: Excimer 레이저 annealing 된 HB-GaAs 내의 깊은 준위 연구 .

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	조훈영	-
dc.contributor.author	김성일	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-22T00:42:03Z	-
dc.date.available	2024-01-22T00:42:03Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1989-10	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147303	-
dc.title	Excimer 레이저 annealing 된 HB-GaAs 내의 깊은 준위 연구 .	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	새물리, v.v. 29, no.no. 5, pp.591 - 596	-
dc.citation.title	새물리	-
dc.citation.volume	v. 29	-
dc.citation.number	no. 5	-
dc.citation.startPage	591	-
dc.citation.endPage	596	-
dc.subject.keywordAuthor	excimer laser	-
dc.subject.keywordAuthor	HB-GaAs	-
dc.subject.keywordAuthor	deep level	-

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