Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.contributor.author | 조훈형 | - |
| dc.contributor.author | 민석기 | - |
| dc.contributor.author | 조성호 | - |
| dc.date.accessioned | 2024-01-22T00:43:15Z | - |
| dc.date.available | 2024-01-22T00:43:15Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1989-08 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/147323 | - |
| dc.title | Isothermal capacitance transient spectroscopy(ICTS) study for midgap levels in HB-GaAs by rapid thermal annealing. | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | Applied physics A, v.v. 48, pp.359 - 363 | - |
| dc.citation.title | Applied physics A | - |
| dc.citation.volume | v. 48 | - |
| dc.citation.startPage | 359 | - |
| dc.citation.endPage | 363 | - |
| dc.subject.keywordAuthor | ICTS | - |
| dc.subject.keywordAuthor | midgap level | - |
| dc.subject.keywordAuthor | HB-GaAs | - |
| dc.subject.keywordAuthor | rapid thermal annealing | - |
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