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VPE 법으로 성장한 In//xGa//1//-//xAs(x<0.035)/GaAs 에피층내의 깊은 준위 전자덫 연구 .

Authors

김은규; 조훈영; 민석기; 윤주훈; 김현수; 조성호

Issue Date

1989-02

Citation

새물리, v.v. 29, no.no. 1, pp.44 - 49

Keywords

VPE; InGaAs/GaAs; DLTS; electron trap

URI

https://pubs.kist.re.kr/handle/201004/147376

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KIST Article > Others

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