DSpace at KIST: Effects of annealing temperature on microstructure and electrical and optical properties of radio-frequency-sputtered tin-doped indium oxid thin films.

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DC Field	Value	Language
dc.contributor.author	나종갑	-
dc.contributor.author	Y. R. Cho	-
dc.contributor.author	Y. H. Kim	-
dc.contributor.author	T. D. Lee	-
dc.contributor.author	S. J. Park	-
dc.date.accessioned	2024-01-22T01:03:35Z	-
dc.date.available	2024-01-22T01:03:35Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1989-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147444	-
dc.title	Effects of annealing temperature on microstructure and electrical and optical properties of radio-frequency-sputtered tin-doped indium oxid thin films.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	J. Am. ceram. soc., v.v. 72, no.no. 4, pp.698 - 701	-
dc.citation.title	J. Am. ceram. soc.	-
dc.citation.volume	v. 72	-
dc.citation.number	no. 4	-
dc.citation.startPage	698	-
dc.citation.endPage	701	-
dc.subject.keywordAuthor	indium oxide	-
dc.subject.keywordAuthor	sputtering	-
dc.subject.keywordAuthor	electrical property	-
dc.subject.keywordAuthor	optical property	-

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