DSpace at KIST: A study on the extraction of mobility reduction parameters in short channel n-MOSFETs at room temperature.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이명복	-
dc.contributor.author	이정일	-
dc.date.accessioned	2024-01-22T01:04:26Z	-
dc.date.available	2024-01-22T01:04:26Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1989-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147458	-
dc.title	A study on the extraction of mobility reduction parameters in short channel n-MOSFETs at room temperature.	-
dc.title.alternative	상온에서 짧은 채널 n-MOSFET 의 이동도 감쇠 변수 추출에 관한 연구 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회논문지, v.v. 26, no.no. 9, pp.1375 - ?	-
dc.citation.title	전자공학회논문지	-
dc.citation.volume	v. 26	-
dc.citation.number	no. 9	-
dc.citation.startPage	1375	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	MOSFET	-

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