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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T01:10:39Z-
dc.date.available2024-01-22T01:10:39Z-
dc.date.created2022-01-10-
dc.date.issued1988-07-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147561-
dc.title(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 1, pp.121 - ?-
dc.citation.title응용물리-
dc.citation.volumev. 1-
dc.citation.startPage121-
dc.citation.endPage?-
dc.subject.keywordAuthorX-ray diffraction-
dc.subject.keywordAuthorGaAs-on-Si-
dc.subject.keywordAuthorMOCVD-
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