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HB-GaAs 내의 deep electron trap 들에 대한 열방출률과 활성화 에너지의 전기장 의존성 .

Authors

김은규; 조훈영; 민석기

Issue Date

1988-04

Citation

새물리, v.v. 28, no.no. 2, pp.272 - 278

Keywords

HB-GaAs; deep electron trap; thermal emission; activation energy; electric field

URI

https://pubs.kist.re.kr/handle/201004/147581

Appears in Collections:

KIST Article > Others

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