X- 선 회절방법에 의한 Al// χ Ga//1//-// χ As,In// χ Ga//1//-// χ As 의 AlAs,InAs 조성결정 .

Authors
김용김무성김현수박승철한철원민석기
Issue Date
1988-04
Citation
응용물리, v.v. 1, pp.10 - ?
Keywords
X-ray diffraction; AlGaAs; InGaAs; VPE; MOCVD
URI
https://pubs.kist.re.kr/handle/201004/147583
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE