DSpace at KIST: Isothermal capacitance transient spectroscopy (ICTS) 방법을 이용한 금속과 반도체 (GaAs) 접합의 계면상태에 관한 연구 .

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	조훈영	-
dc.contributor.author	민석기	-
dc.contributor.author	한철원	-
dc.contributor.author	박승철	-
dc.date.accessioned	2024-01-22T01:12:24Z	-
dc.date.available	2024-01-22T01:12:24Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1988-02	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147590	-
dc.title	Isothermal capacitance transient spectroscopy (ICTS) 방법을 이용한 금속과 반도체 (GaAs) 접합의 계면상태에 관한 연구 .	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	새물리, v.v. 28, no.no. 1, pp.178 - 183	-
dc.citation.title	새물리	-
dc.citation.volume	v. 28	-
dc.citation.number	no. 1	-
dc.citation.startPage	178	-
dc.citation.endPage	183	-
dc.subject.keywordAuthor	ICTS	-
dc.subject.keywordAuthor	GaAs	-
dc.subject.keywordAuthor	interface states	-

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