Isothermal capacitance transient spectroscopy (ICTS) 방법을 이용한 금속과 반도체 (GaAs) 접합의 계면상태에 관한 연구 .

Authors
김은규조훈영민석기한철원박승철
Issue Date
1988-02
Citation
새물리, v.v. 28, no.no. 1, pp.178 - 183
Keywords
ICTS; GaAs; interface states
URI
https://pubs.kist.re.kr/handle/201004/147590
Appears in Collections:
KIST Article > Others
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