DSpace at KIST: Effect of flow rate ratios of SiH//4/NH//3/N//2 and SiH//4/NH//3/Ar on the properties of PECVD SiN//x:H films.

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DC Field	Value	Language
dc.contributor.author	김용태	-
dc.contributor.author	김춘근	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-22T01:15:22Z	-
dc.date.available	2024-01-22T01:15:22Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1988-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147637	-
dc.title	Effect of flow rate ratios of SiH//4/NH//3/N//2 and SiH//4/NH//3/Ar on the properties of PECVD SiN//x:H films.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	J. Kor. inst. telem. elec., v.v. 25, pp.490 - 494	-
dc.citation.title	J. Kor. inst. telem. elec.	-
dc.citation.volume	v. 25	-
dc.citation.startPage	490	-
dc.citation.endPage	494	-

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