DSpace at KIST: Hot-carrier-induced deradation in submicron MOS transistors.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	최병진	-
dc.date.accessioned	2024-01-22T01:16:49Z	-
dc.date.available	2024-01-22T01:16:49Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1988-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147661	-
dc.title	Hot-carrier-induced deradation in submicron MOS transistors.	-
dc.title.alternative	Submicron MOS 트랜지스터의 뜨거운 운반자에 의한 노쇠 현상 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회논문지, v.v. 25, no.no. 7, pp.780 - ?	-
dc.citation.title	전자공학회논문지	-
dc.citation.volume	v. 25	-
dc.citation.number	no. 7	-
dc.citation.startPage	780	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	MOS transistors	-

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