Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강광남 | - |
| dc.contributor.author | 이명복 | - |
| dc.contributor.author | 이정일 | - |
| dc.date.accessioned | 2024-01-22T01:17:54Z | - |
| dc.date.available | 2024-01-22T01:17:54Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1988-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/147679 | - |
| dc.title | The effects of residual oxide layers formed after chemical etching on the electrical characteristics of Al/GaAs schottky barrier. | - |
| dc.title.alternative | 화학식각된 계면산화막이 Al/GaAs schottky barrier 의 전기적 특성에 미치는 효과 = | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | 새물리, v.v. 25, no.no. 3, pp.349 - ? | - |
| dc.citation.title | 새물리 | - |
| dc.citation.volume | v. 25 | - |
| dc.citation.number | no. 3 | - |
| dc.citation.startPage | 349 | - |
| dc.citation.endPage | ? | - |
| dc.subject.keywordAuthor | schottky barrier | - |
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