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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author한철원-
dc.contributor.author김춘근-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T01:31:49Z-
dc.date.available2024-01-22T01:31:49Z-
dc.date.created2022-01-10-
dc.date.issued1987-12-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147694-
dc.titleRTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.27, no.6, pp.674 - 679-
dc.citation.title새물리-
dc.citation.volume27-
dc.citation.number6-
dc.citation.startPage674-
dc.citation.endPage679-
dc.subject.keywordAuthorRTA-
dc.subject.keywordAuthorHB-GaAs-
dc.subject.keywordAuthorICTS-
dc.subject.keywordAuthorEL2-
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