DSpace at KIST: HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	조훈영	-
dc.contributor.author	박승철	-
dc.contributor.author	김용태	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-22T01:31:57Z	-
dc.date.available	2024-01-22T01:31:57Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1987-12	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147696	-
dc.title	HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	새물리, v.v. 27, no.no. 6, pp.680 - 685	-
dc.citation.title	새물리	-
dc.citation.volume	v. 27	-
dc.citation.number	no. 6	-
dc.citation.startPage	680	-
dc.citation.endPage	685	-
dc.subject.keywordAuthor	deep level	-
dc.subject.keywordAuthor	HB-GaAs	-
dc.subject.keywordAuthor	EL2	-

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