HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).

Authors
김은규조훈영박승철김용태민석기
Issue Date
1987-12
Citation
새물리, v.v. 27, no.no. 6, pp.680 - 685
Keywords
deep level; HB-GaAs; EL2
URI
https://pubs.kist.re.kr/handle/201004/147696
Appears in Collections:
KIST Article > Others
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