Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 주병권 | - |
| dc.contributor.author | S. R. Rho | - |
| dc.contributor.author | S. H. Kim | - |
| dc.contributor.author | C. J. Kim | - |
| dc.date.accessioned | 2024-01-22T01:32:00Z | - |
| dc.date.available | 2024-01-22T01:32:00Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1987-12 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/147697 | - |
| dc.publisher | Korean Physical Society | - |
| dc.title | Fabrication of diodes using the Si-iBP-Si SOI structure | - |
| dc.type | Article | - |
| dc.description.journalClass | 2 | - |
| dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.20, no.4, pp.373 - 378 | - |
| dc.citation.title | Journal of the Korean Physical Society | - |
| dc.citation.volume | 20 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 373 | - |
| dc.citation.endPage | 378 | - |
| dc.subject.keywordAuthor | silicon on insulator | - |
| dc.subject.keywordAuthor | SOI device | - |
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