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dc.contributor.author강문상-
dc.contributor.authorLim Tae Hoon-
dc.date.accessioned2024-02-21T05:06:34Z-
dc.date.available2024-02-21T05:06:34Z-
dc.date.issued1996-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/148832-
dc.titleCharacteristics of hydrogenated amorphous and recrystallized Si films with the variation of the substrate temperature in ECR plasma CVD.-
dc.title.alternativeCharacteristics of hydrogenated amorphous and recrystallized Si films with the variation of the substrate temperature in ECR plasma CVD.-
dc.typeBook-
dc.citation.startPage1696-
dc.citation.endPage?-
dc.relation.isPartOfSeries37th annual meeting of the division of plasma physics, American physicsl society, Kentucky, USA-
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