Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth

Authors
Kim, Tae SooNoh, GichangKwon, SeongdaeKim, Ji YoonDhakal, Krishna P.Oh, SaeyoungChai, Hyun-JunPark, EunpyoKim, In SooLee, EunjiKim, YoungbumLee, JaehyunJo, Min-kyungKang, MinsooPark, CheolminKim, JeonghoPark, JeongwonKim, SuhyunKim, MingyuKim, YuseokChoi, Sung-YoolSong, SeungwooJeong, Hu YoungKim, JeongyongKwak, Joon YoungKang, Kibum
Issue Date
2024-02
Publisher
John Wiley & Sons Ltd.
Citation
Advanced Functional Materials
Abstract
2D MoS2 has gained attention for the post-silicon material owing to its atomically thin nature and dangling bond-free surface. The bi-layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi-layer MoS2 is still challenging. Herein, the uniform growth of bi-layer MoS2 is demonstrated using gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD). Thanks to enhanced metal reactant diffusion length in GAA-MOCVD, the uniform growth of bi-layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi-layer MoS2 field-effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi-layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm(2) V-1 s(-1). Using the partially grown epitaxial bi-layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near-infrared photoresponse with a low dark current that is advantageous for both monolayer and bi-layer applications. The potential expansion of the growth technique to layer-by-layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2.
Keywords
TRANSITION-METAL DICHALCOGENIDES; 2-DIMENSIONAL MATERIALS; HIGH-MOBILITY; LAYER MOS2; TRANSISTORS; NUCLEATION; PHOTOTRANSISTORS; PHOTODETECTOR; 2D materials; bi-layer growth; gas-phase alkali metal; metal-organic chemical vapor deposition; transition metal dichalcogenides
ISSN
1616-301X
URI
https://pubs.kist.re.kr/handle/201004/149340
DOI
10.1002/adfm.202312365
Appears in Collections:
KIST Article > 2024
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