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dc.contributor.authorKim, Yeon Ho-
dc.contributor.authorJiang, Wei-
dc.contributor.authorLee, Donghun-
dc.contributor.authorMoon, Donghoon-
dc.contributor.authorChoi, Hyun-Young-
dc.contributor.authorShin, June-Chul-
dc.contributor.authorJeong, Yeonsu-
dc.contributor.authorKim, Jong Chan-
dc.contributor.authorLee, Jaeho-
dc.contributor.authorHuh, Woong-
dc.contributor.authorHan, Chang Yong-
dc.contributor.authorSo, Jae-Pil-
dc.contributor.authorKim, Tae Soo-
dc.contributor.authorKim, Seong Been-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorWang, Gunuk-
dc.contributor.authorKang, Kibum-
dc.contributor.authorPark, Hong-Gyu-
dc.contributor.authorJeong, Hu Young-
dc.contributor.authorIm, Seongil-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorLow, Tony-
dc.contributor.authorLee, Chul-Ho-
dc.date.accessioned2024-05-16T09:30:27Z-
dc.date.available2024-05-16T09:30:27Z-
dc.date.created2024-05-16-
dc.date.issued2024-04-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/149854-
dc.description.abstractA gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of approximate to 60 mV dec(-1) and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (E-F) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that E-F depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics.-
dc.languageEnglish-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleBoltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202314274-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAdvanced Materials-
dc.citation.titleAdvanced Materials-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-85191810760-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Early Access-
dc.subject.keywordAuthor2D semiconductors-
dc.subject.keywordAuthorFermi-level pinning-
dc.subject.keywordAuthorlow-power electronics-
dc.subject.keywordAuthormetal-semiconductor field-effect transistors-
dc.subject.keywordAuthorMoS2-
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KIST Article > 2024
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